Elektronik Elemanlar Ve Devre Teorisi Pdf Reader

<ul><li>X-BAND LOW PHASE NOISE MMIC VCO &HIGH POWER MMIC SPDT DESIGNa thesissubmitted to the department of electrical andelectronics engineeringand the graduate school of engineering and scienceof bilkent universityin partial fulfillment of the requirementsfor the degree ofmaster of scienceBySinan OsmanogluJune, 2014</li><li>I certify that I have read this thesis and that in my opinion it is fully adequate,in scope and in quality, as a thesis for the degree of Master of Science.Prof. Dr. Ekmel Ozbay(Advisor)I certify that I have read this thesis and that in my opinion it is fully adequate,in scope and in quality, as a thesis for the degree of Master of Science.Dr. Tark Reyhan(Co-Advisor)I certify that I have read this thesis and that in my opinion it is fully adequate,in scope and in quality, as a thesis for the degree of Master of Science.Prof. Dr. Yusuf Ziya IderI certify that I have read this thesis and that in my opinion it is fully adequate,in scope and in quality, as a thesis for the degree of Master of Science.Prof. Dr. Atilla AydnlApproved for the Graduate School of Engineering and Science:Prof. Dr. Levent OnuralDirector of the Graduate Schoolii</li><li>ABSTRACTX-BAND LOW PHASE NOISE MMIC VCO &HIGH POWER MMIC SPDT DESIGNSinan OsmanogluM.S. in Electrical and Electronics EngineeringSupervisor: Prof. Dr. Ekmel Ozbay & Dr. Tark ReyhanJune, 2014Generally the tuning bandwidth (BW) of a VCO is smaller than the tuning BWof the resonant circuit itself. Using proper components with right topology canhandle this problem. In order to overcome this problem and improve the tun-ing BW of the VCO, common-base inductive feedback topology with GalliumArsenide (GaAs) Heterojunction Bipolar Transistor (HBT) is used and an opti-mized topology for tank circuit is selected to minimize the effect of bandwidthlimiting components. Designed VCO with this topology achived -117 dBc/Hz at1 MHz offset phase noise with 9-13 dBm output power between 8.8-11.4 GHzband. Second part of the thesis composed of Single Pole Double Throw (SPDT)RF Switch design. From mesa resistors to SPDT fabrication, everything is fab-ricated using Bilkent University NANOTAM Gallium Nitride (GaN) on SiliconCarbide (SiC) process. Switching HEMTs are fabricated to generate a model todesign SPDTs and the final design works between DC-12 GHz with less than 1.4dB insertion loss (IL), -20 dB isolation and 14.5 dB return loss (RL) at worstcase. The power handling of the switches are better than 40 dBm at output with0.2 dB compression, which is measured with continuous wave (CW) signal at 10GHz.Keywords: MMIC, VCO, Phase Noise, SPDT, GaAs, GaN, CPW, HEMT, HBT.iii</li><li>OZETX-BANT DUSUK FAZ GURULTULU VCO & YUKSEKGUCLU SPDT TASARIMISinan OsmanogluElektrik-Elektronik Muhendisligi, Yuksek LisansTez Yoneticisi: Prof. Dr. Ekmel Ozbay & Dr. Tark ReyhanHaziran, 2014Dusuk faz gurultulu osilatorler resonator devresinin bant genisligi ilekarslastrldgnda genellikle daha dar bir banda sahiptirler. Dogru bir topoloji veuygun devre elemanlar ile bu sorun cozulebilmektedir. Galyum Arsenit (GaAs)temelli HBT nin base ucuna bir bobin eklenerek elde edilen yap ile uygun birresonans devresi sayesinde bant genisligini kstlayan devre elemanlarnn etkisi enaza indirilebilmektedir. Bu yap ile tasarlanan VCO ile 8.8-11.4 GHz aralgnda9-13 dBm cks gucunde, 1 MHz ofsette -117 dBc/Hz faz gurultusu elde edilmistir.Tezin ikinci ksm ise Single Pole Double Throw (SPDT) RF anahtar tasarmndanolusmaktadr. Mesa direnclerinden SPDT uretimine kadar tum islemler BilkentUniversitesi NANOTAM da Silikon Karbid (SiC) uzerine Galyum Nitrat (GaN)islemi kullanlarak uretilmistir. Oncelikle anahtarlama transistorleri uretilerekSPDT tasarm yapabilmek icin model ckarlmstr. Bu model ile uretilen anahtaryaplar DC-12 GHz aralgnda 1.4 dB den az araya girme kayb (IL), -20 dB deniyi yaltm ve en kotu durumda 14.5 dB geriye donus kayb ile calsabilmektedir.Ayrca 10 GHz de surekli sinyal altnda 0.2 dB den az kompresyon ile 40 dBmlik cks verebilmektedir.Anahtar sozcukler : MMIC, VCO, Phase Noise, SPDT, GaAs, GaN, CPW,HEMT, HBT.iv</li><li>AcknowledgementI would like to thank my advisor Dr. Tark Reyhan for the continuous supportof my study and research, for his patience, motivation, and immense knowledge.His guidance helped me in all the time of research and writing of this thesis.I would like to thank Prof. Dr. Ekmel Ozbay for his support and guidance inthe projects.I would like to thank Dr. Ozlem Sen for her support in RF Switch project.I would like to thank the rest of my thesis committee: Prof. Dr. Yusuf ZiyaIder and Prof. Dr. Atilla Aydnl for being a part of my thesis committee.I would also like to thank my family: my parents Gulbiye and Seyfi Osmanogluand my elder brother Kamuran Osmanoglu. They were always supporting me andencouraging me with their best wishes.v</li><li>Contents1 Introduction 11.1 Organization of Thesis . . . . . . . . . . . . . . . . . . . . . . . . 22 Background 32.1 Phase Noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32.2 Thermal Noise and Noise Figure . . . . . . . . . . . . . . . . . . . 72.3 Flicker Noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82.4 Phase Noise in Oscillators . . . . . . . . . . . . . . . . . . . . . . 92.4.1 Oscillator Basics . . . . . . . . . . . . . . . . . . . . . . . 92.5 Leeson Phase Noise Model . . . . . . . . . . . . . . . . . . . . . . 122.6 LC Resonators . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142.6.1 Loaded Q . . . . . . . . . . . . . . . . . . . . . . . . . . . 162.6.2 Unloaded Q . . . . . . . . . . . . . . . . . . . . . . . . . . 173 VCO Design 183.1 H01U-10 InGaP/GaAs HBT Process . . . . . . . . . . . . . . . . 20vi</li><li>CONTENTS vii3.1.1 HBT Transistor . . . . . . . . . . . . . . . . . . . . . . . . 213.2 Resonator Design . . . . . . . . . . . . . . . . . . . . . . . . . . . 223.2.1 Varactor . . . . . . . . . . . . . . . . . . . . . . . . . . . . 223.2.2 Inductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . 243.2.3 Resonator Test . . . . . . . . . . . . . . . . . . . . . . . . 263.3 Topology Selection . . . . . . . . . . . . . . . . . . . . . . . . . . 293.4 Negative Resistance Generation . . . . . . . . . . . . . . . . . . . 303.5 Oscillation Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . 333.5.1 Linear Techniques . . . . . . . . . . . . . . . . . . . . . . . 333.5.2 Non-Linear Technique . . . . . . . . . . . . . . . . . . . . 363.5.3 Time Domain . . . . . . . . . . . . . . . . . . . . . . . . . 383.5.4 Layout Generation and HB Simulations . . . . . . . . . . . 394 Phase Noise Measurement 424.1 Direct Measurement Technique . . . . . . . . . . . . . . . . . . . 424.2 Phase Detector Techniques . . . . . . . . . . . . . . . . . . . . . . 434.2.1 Phase Locked Loop (PLL) Method . . . . . . . . . . . . . 444.2.2 Delay Line Method . . . . . . . . . . . . . . . . . . . . . . 454.3 Cross-Correlation Technique . . . . . . . . . . . . . . . . . . . . . 455 RF Switch 475.1 SPST Switch Design Considerations . . . . . . . . . . . . . . . . . 48</li><li>CONTENTS viii5.2 RF Switch Design . . . . . . . . . . . . . . . . . . . . . . . . . . . 505.2.1 Switch Model . . . . . . . . . . . . . . . . . . . . . . . . . 515.3 Switch Power Handling . . . . . . . . . . . . . . . . . . . . . . . . 545.3.1 ON-state power handling . . . . . . . . . . . . . . . . . . . 545.3.2 OFF-state power handling . . . . . . . . . . . . . . . . . . 545.4 HEMT Modelling . . . . . . . . . . . . . . . . . . . . . . . . . . . 555.5 SPST Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 575.6 SPDT Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 666 Conclusion 69A Varactor 74</li><li>List of Figures2.1 Long-term (left) and short-term (right) stability . . . . . . . . . . 42.2 Ideal sine wave (left), Frequency spectrum (right) . . . . . . . . . 52.3 Real-world sine wave . . . . . . . . . . . . . . . . . . . . . . . . . 52.4 Single Sideband Phase Noise . . . . . . . . . . . . . . . . . . . . . 62.5 Coversion of Noise . . . . . . . . . . . . . . . . . . . . . . . . . . 82.6 Basic Oscillator Block Diagram . . . . . . . . . . . . . . . . . . . 92.7 Parallel Resonance Circuit . . . . . . . . . . . . . . . . . . . . . . 102.8 Normalized bandwidth . . . . . . . . . . . . . . . . . . . . . . . . 112.9 Model of an oscillator for noise analysis . . . . . . . . . . . . . . . 122.10 An example phase noise plot for an oscillator . . . . . . . . . . . . 142.11 Series (on the left) and parallel (on the right) resonators . . . . . 142.12 Response of series and parallel resonators . . . . . . . . . . . . . . 152.13 td and QL of both series and parallel resonators (Port impedancesare scaled by 1000, 50e3 for parallel and 50e-3 for series) . . . 173.1 Oscillator Design Diagram . . . . . . . . . . . . . . . . . . . . . . 19ix</li><li>LIST OF FIGURES x3.2 Oscillator Design Diagram . . . . . . . . . . . . . . . . . . . . . . 203.3 HBT Representation . . . . . . . . . . . . . . . . . . . . . . . . . 213.4 Dynamic load line superposed on IV curve . . . . . . . . . . . . . 213.5 Beta vs. Base Current . . . . . . . . . . . . . . . . . . . . . . . . 213.6 ft vs. Collector Current (left), fmax vs. Collector Current (right) 223.7 PN B/C Junction Diodes with fingers symbol on the left and layouton the right . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 223.8 Varactor test circuit on the lest and Capacitance vs Freq. on the left 233.9 Varactor Q vs Freq. . . . . . . . . . . . . . . . . . . . . . . . . . . 233.10 Inductor symbol on the lest and layout on the right . . . . . . . . 243.11 Inductor test structure . . . . . . . . . . . . . . . . . . . . . . . . 253.12 Inductor test results . . . . . . . . . . . . . . . . . . . . . . . . . 253.13 Resonator test configuration . . . . . . . . . . . . . . . . . . . . . 263.14 Resonator response . . . . . . . . . . . . . . . . . . . . . . . . . . 273.15 Unloaded Q . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 273.16 Loaded Q . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 283.17 Loaded Q and Resonance Freq. vs Tuning Voltage . . . . . . . . . 283.18 (a) Common Emitter (CE), (b) Common Base (CB), (c) CommonCollector (CC) Configurations . . . . . . . . . . . . . . . . . . . . 293.19 Stability Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 303.20 Stability Circles . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31</li><li>LIST OF FIGURES xi3.21 S11 vs Feedback Inductance . . . . . . . . . . . . . . . . . . . . . 323.22 Linear test with ideal transformer . . . . . . . . . . . . . . . . . . 333.23 Small-Signal oscillation condition . . . . . . . . . . . . . . . . . . 343.24 Linear test with OscTest setup . . . . . . . . . . . . . . . . . . . . 353.25 Linear test with OscTest result . . . . . . . . . . . . . . . . . . . 353.26 Harmonic-Balance test setup . . . . . . . . . . . . . . . . . . . . . 363.27 Harmonic-Balance test results . . . . . . . . . . . . . . . . . . . . 373.28 Output waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . 383.29 Transient analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . 383.30 Layout (on the right) and Meshing (on the left) . . . . . . . . . . 393.31 CoSim test bench . . . . . . . . . . . . . . . . . . . . . . . . . . . 403.32 Harmonic-Balance test results (with EM) . . . . . . . . . . . . . . 414.1 Direct Measurement Technique . . . . . . . . . . . . . . . . . . . 434.2 Phase Detector Concept . . . . . . . . . . . . . . . . . . . . . . . 434.3 PLL Method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 444.4 Delay Line Discriminator Method . . . . . . . . . . . . . . . . . . 454.5 Cross-Correlation Method . . . . . . . . . . . . . . . . . . . . . . 465.1 Mesa Resistor photo-mask . . . . . . . . . . . . . . . . . . . . . . 485.2 Fabricated Mesa resistors . . . . . . . . . . . . . . . . . . . . . . . 495.3 Mesa Resistor Measurements . . . . . . . . . . . . . . . . . . . . . 49</li><li>LIST OF FIGURES xii5.4 HEMT photo-mask (left), Fabricated HEMT (right) . . . . . . . . 505.5 HEMT representation . . . . . . . . . . . . . . . . . . . . . . . . . 515.6 SPDT configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 525.7 Equivalent SPDT model . . . . . . . . . . . . . . . . . . . . . . . 525.8 Switch model analysis . . . . . . . . . . . . . . . . . . . . . . . . 535.9 HEMT measurement configuration (gate grounded) . . . . . . . . 555.10 I-V of a HEMT (2x100um) . . . . . . . . . . . . . . . . . . . . . . 565.11 gm vs. gate voltage (2x100um) . . . . . . . . . . . . . . . . . . . . 575.12 Circuit topology for the Single-Pole Single-Throw switches . . . . 575.13 Photograph of a fabricated CPW SPST switch . . . . . . . . . . . 585.14 SPST1 S-parameters . . . . . . . . . . . . . . . . . . . . . . . . . 595.15 SPST2 S-parameters . . . . . . . . . . . . . . . . . . . . . . . . . 605.16 SPST3 S-parameters . . . . . . . . . . . . . . . . . . . . . . . . . 615.17 SPST4 S-parameters . . . . . . . . . . . . . . . . . . . . . . . . . 625.18 SPST5 S-parameters . . . . . . . . . . . . . . . . . . . . . . . . . 635.19 Large-Signal Compression and Loss vs Input Power . . . . . . . . 645.20 SPDT Layouts . . . . . . . . . . . . . . . . . . . . . . . . . . . . 665.21 EM simulation results . . . . . . . . . . . . . . . . . . . . . . . . 67A.1 Varactor Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74A.2 Varactor Model (Detailed) . . . . . . . . . . . . . . . . . . . . . . 75</li><li>List of Tables3.1 Summary of final design . . . . . . . . . . . . . . . . . . . . . . . 405.1 GaN switch HEMT circuit parameters . . . . . . . . . . . . . . . 565.2 Summary of Design Parameters . . . . . . . . . . . . . . . . . . . 585.3 SPST Measurement summary . . . . . . . . . . . . . . . . . . . . 655.4 Summary of SPDT design . . . . . . . . . . . . . . . . . . . . . . 686.1 Comparison Table of Recent VCOs in GaAs HBT . . . . . . . . . 716.2 Comparison Table of Recent SPDTs on GaN . . . . . . . . . . . 71A.1 Varactor Parameters . . . . . . . . . . . . . . . . . . . . . . . . . 74xiii</li><li>Chapter 1IntroductionAny RF/Microwave system requires a signal source to operate. The quality of thesignal source is very important to process the received/transmitted data success-fully. There are some properties of a signal source like linearity, stability, signalpurity, bandwidth, phase noise etc.In a transceiver system, an RF switch which is a front-end component hascrucial importance. An RF switch has to be capable of switching high powersat higher frequencies with low loss and high isolation. When system receives arelatively low power signal, the loss of the RF switch is critical and isolation iscrucial when transmitting a high power signal to prevent damage to the receiverpart.This t...</li></ul>

Elektronik Elemanlar Ve Devre Teorisi Pdf Reader Download

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